Nanotechnology Applications in Electronics

A collaborative study by Ajou University and Stanford University has introduced an amorphous niobium phosphide (NbP) thin film that offers reduced electrical resistivity as the film thickness decreases, addressing a critical challenge in semiconductor miniaturization. Unlike traditional metals such as copper, which face increased resistivity in ultrathin layers due to electron-surface scattering, the amorphous NbP thin film enhances surface conduction and achieves superior performance at nanoscale thicknesses. The research, published in Science, demonstrates that NbP films thinner than 5 nanometers exhibit significantly lower resistivity than bulk NbP and conventional metals, making them promising for nanoelectronics. The study highlights the material’s compatibility with current semiconductor processes, potential cost benefits, and effectiveness when deposited via atomic layer deposition (ALD), a method that allows precise thickness control. This breakthrough could revolutionize semiconductor wiring by enabling ultrathin, low-resistivity interconnects critical for advancing next-generation chip technologies. LINK ⬇️ #ALDep #Semiconductor

⚡ How Nanocrystalline Cores Redefine Efficiency and Size in Power Electronics In power electronics, the challenge never changes — we’re all chasing higher efficiency, smaller size, and better reliability. But the material science behind that challenge has changed. 👉 The rise of nanocrystalline alloys is transforming how we design magnetic cores — from solid-state transformers (SSTs) to EV fast chargers and AI power systems. This isn’t just an upgrade. It’s a material revolution. 🔹 1. The Efficiency Equation Every watt matters. At scale, a 1% gain in conversion efficiency can mean millions saved and thousands of tons of CO₂ avoided. Traditional materials — silicon steel or ferrite — suffer heavy eddy current losses at high frequency. That heat wastes energy and forces bulky cooling systems. Nanocrystalline alloys change that: ✅ High resistivity (~120 μΩ·cm) cuts eddy losses ✅ Nano-scale grains (<12 nm) reduce domain wall motion ✅ Uniform microstructure ensures stability under heat 💡 Result: up to 70% lower core loss, higher efficiency, longer lifespan. 🔹 2. Shrinking the Core, Expanding the Possibilities With initial permeability between 80,000–110,000, and some grades reaching 190,000, nanocrystalline cores deliver the same flux with 40–70% less volume. That means: ⚙️ Smaller transformers ⚙️ Lighter EV chargers ⚙️ Compact UPS and data center modules Unlike amorphous alloys, nanocrystalline materials maintain stable permeability from 1–100 kHz — ideal for high-frequency, high-density design. Less size. Less heat. More power. 🔹 3. Real-World Impact A 30 kW EV fast charger uses only 3–4 kg of nanocrystalline core — boosting efficiency by ~2%. A 100 kVA SST can be 40% smaller and 25°C cooler than one with amorphous cores. In data centers, a 1% gain in efficiency saves millions of kWh annually. From roadside chargers to AI grids, energy efficiency has become a materials challenge — and nanocrystalline alloys are the answer. 🔹 4. Engineering for the Future High frequency. High density. High intelligence. That’s where power electronics is heading — and nanocrystalline cores are the key enabler. They offer: ⚡ High flux density (1.2–1.6 T) ⚡ Low loss at high frequency ⚡ Excellent thermal & magnetic stability This rare balance makes them the material backbone of next-gen energy systems. 🔹 5. The Big Picture From EV charging to microgrids, AI data centers to SSTs, the most advanced systems share one truth:Magnetic materials built for the future. Nanocrystalline alloys are no longer a lab story — they’re mass-produced, cost-optimized, and field-proven. Just as silicon powered the digital age, nanocrystalline alloys are powering the energy age. 💬 Your turn: Are you already testing nanocrystalline cores in your designs? What’s your biggest high-frequency challenge? 👇 Let’s share insights. #Nanocrystalline #PowerElectronics #SolidStateTransformer #EVCharging #DataCenter #SmartGrid #EnergyEfficiency #MagneticMaterials

Atomically thin semiconductors driving smart sensors with real-world impact Focusing on atomically thin semiconductors at RMIT University, we are creating the next generation of ultra-sensitive sensors and smart systems. They are smaller, faster, and more energy-efficient than ever before. Our innovation begins at the atomic scale. My colleagues and I are engineering two-dimensional (2D) semiconductors such as graphene, transition-metal dichalcogenides, and transition-metal oxides - materials only a few atoms thick yet possessing extraordinary electrical and optical tunability. These quantum-thin layers exhibit exceptional charge-carrier mobility, excitonic behaviour, and mechanical flexibility, unlocking new frontiers in wearable sensors, ultra-fast optoelectronics, and bio-integrated devices. I’m lucky to work in world-class research facilities, which serve as the backbone of innovation, enabling interdisciplinary collaboration across scales, and alongside several national research centres, including the ARC Centre of Excellence in Optical Microcombs for Breakthrough Science (COMBS) . These hubs help connect my research to a global network of experts in photonics, quantum materials, and low-energy electronics. What truly distinguishes our approach is the ability to translate atomic-scale discoveries into intelligent, connected systems. Atomically thin semiconductor devices are being integrated into Internet of Things platforms, wireless communication modules, and AI-assisted signal processors, creating systems that not only sense but also interpret and respond. These platforms enable real-time environmental monitoring, such as detecting trace gases and pollutants, as well as advanced biomedical diagnostics, where bio-field-effect transistors (bio-FETs) and photonic biosensors can identify disease biomarkers at early stages. In the energy and mobility sectors, high-mobility 2D semiconductors are driving low-power electronics and adaptive control systems for sustainable technologies. RMIT’s multidisciplinary engineering ecosystem ensures each layer, from material design to data analytics, contributes to intelligent functionality. A notable example of this multi-layered ecosystem at work is the world-first ingestible gas-sensing capsule, now commercialised by Atmo Biosciences. Incorporating nanoscale sensors, a smart processor, and a wireless transmission module, the capsule measures intestinal gases in vivo and transmits real-time data to reveal insights into gut health. It exemplifies how nanomaterial-enabled sensors can evolve into life-changing medical technologies. By uniting atomically thin materials, smart system integration, and global collaboration, my colleagues and I continue to lead in Electrical and Electronic Engineering research. We are shaping a future where every atom powers intelligent, sustainable, and connected technologies. Interested in collaborating? Get in touch: Jian Zhen Ou - RMIT University

Excited to share our new paper, “High-resolution liquid metal–based stretchable electronics enabled by colloidal self-assembly and microtransfer printing”, just published in Science Advances! This work introduces a scalable approach for microscale patterning of liquid metal particle films with high conductivity, extreme stretchability, and unusual strain- and pressure-insensitive resistance. We demonstrate applications in balloon catheter–integrated microelectrode arrays for high-resolution cardiac mapping, including ex vivo studies in a human heart. These capabilities expand the potential of liquid metal–based stretchable electronics for implantable biomedical devices, soft robotics, and human–machine interfaces. Special thanks to our close collaborator Prof. Igor Efimov! Congratulations to Xuan (Shawn) Li, Eric Rytkin, Anna Pfenniger, Rishi Arora, and all co-authors at University of Southern California, Northwestern University, and University of Chicago. We are also grateful for support from the National Science Foundation (NSF) and the USC Viterbi School of Engineering. Here is the full paper: https://lnkd.in/gYTj3-5E

Transistors don’t live forever… Engineers at Duke University built a working transistor using only carbon-based inks. They printed it on paper, using nanocellulose for insulation, carbon nanotubes for switching, and graphene to carry current. It printed cold, straight from an aerosol jet. No conventional chip materials in sight. After use, they dunked it in a sonic bath, spun the mix, and recovered nearly all the materials. Then they reused them to print again. It won’t power a phone. But for disposable biosensors, environmental monitors, or other short-life electronics, this approach makes a lot of sense. Only about 20% of global e-waste gets recycled. These engineers designed something that doesn’t add to the pile. What stood out wasn’t the device. It was the method. Instead of chasing performance, they designed for disassembly. Electronics that work, then come apart. A rare case where teardown is part of the design. Would you trust printed sensors like this on your skin or inside your building’s walls? Daily #electronics insights from Asia—follow me, Keesjan, and never miss a post by ringing my 🔔 #technology #innovation #titoma

Magnetic tunnel junctions (MTJs) offer important opportunities beyond their established role as non-volatile memory elements, particularly for unconventional computing paradigms such as computational random-access memory (CRAM) for AI hardware, where memory itself becomes the processor. These opportunities stem from MTJs’ intrinsic non-volatility, high endurance, semiconductor-process compatibility, and favorable scaling behavior. In addition, the inherent radiation hardness of magnetic devices provides a distinct advantage for computation in space and low-power sparse computing. With MTJs scaling, current-driven spin-transfer torque (STT) switching encounters limits. Attempts to simultaneously reach attojoule-level switching energies and sub-100-ps dynamics motivate alternative, voltage-driven mechanisms for ultrafast and energy-efficient magnetic control. I am pleased to share that our group has reported a systematic study addressing these challenges through a series of recent publications. These works further advance our previously discovered voltage-controlled exchange coupling (VCEC) in magnetic tunnel junctions (https://lnkd.in/dn_yZM_s). The early report of VCEC in 2022, was enabled through collaborations with Prof. Tony Low and Prof. Andre Mkhoya at UMN, Prof. Sara Majitech at CMU, and Prof. Azad Naeemi at Georgia Tech. Key results include: ·       Unipolar, purely voltage-induced magnetization switching down to 87.5 ps (APL, https://lnkd.in/dsZcJCJy) ·       Experimental demonstration of VCEC in industry-compatible MTJ devices with electrically tunable bipolar interlayer exchange coupling (NanoLetters, https://lnkd.in/dWankUjD) ·       Identification of electron-mediated VCEC with a fast ~1 ns electronic response, confirming a non-ionic microscopic origin (PRB – Letter, https://lnkd.in/dYk4wUcd) ·       Micromagnetic simulations of VCEC-controlled sMTJs, revealing differences between VCEC- and STT-driven switching (AIP Advances, https://lnkd.in/dKsw6GSr) This body of work reflects a true team effort, made possible by the dedication and creativity of many students and collaborators. Special thanks to my PhD student Qi Jia, who played a central role in driving this research forward. Qi Jia, Yu-Chia Chen, Onri Jay Benally, Delin Zhang, Yang Lv, Brandon Zink, Shuang Liang, Yifei Yang, Yu Han Huang, Deyuan Lyu, Brahmdutta Dixit, Tony Low, Sarah Majetich, Andre Mkhoyan, Seungjun Lee, Mukund Bapna, Wei Jiang, Duarte Sousa, Yu-Ching Liao, Zhengyang Zhao, Protyush Sahu, Azad Naeemi This work was supported by the Semiconductor Research Corporation (SRC), as well as by Defense Advanced Research Projects Agency (DARPA), National Science Foundation (NSF), Minnesota Nano Center. #spintronics #MRAM #energyefficient #computing #AI #PIM #CIM #IEEEMagneticsociety#CHIPS #STTMRAM #VCMA #MTJ #microelectronics

The latest research by my PhD student Glen Isaac Maciel García has been published as a Cover Article of Nano Letters! In this project, he has proposed and demonstrated a novel transistor structure: Semiconductor−Free-Space Gate Transistors. In Glen's transistors, the conventional solid dielectric is replaced by a semiconductor−free-space gate configuration with sub-100 nm fin channels and dual side gates. This work presents the first demonstration of free-space gating in wide and ultrawide bandgap semiconductors, achieving performance on par with oxide-gated transistors. The absence of dielectric will also mitigate the impacts of potential quality and interface issues of dielectrics. The nano transistors exhibit subthreshold slopes below 200 mV/dec, high drain current exceeding 250 mA/mm, hysteresis under 230 mV, ION/IOFF ratios above 10^6, and breakdown voltages over 500V. The absence of a solid dielectric layer, combined with the open gate geometry, enables direct access to the gate region for external electric field modulation and threshold voltage tuning, while mitigating the detrimental effects of charges and trap states in conventional dielectrics. These results show the potential of SFGTs for future memory, sensing, and power applications. Special thanks to Prof Biplab Sarkar of IIT for his strong collaboration. Vishal Khandelwal Ganesh Mainali Victor Dorantes Paulin #semiconductor #nanotechnology #transistor #gate #dielectric #PhD #student #research #ultrawide #bandgap https://lnkd.in/eVt_HJZV KAUST (King Abdullah University of Science and Technology) KAUST Research Translation & Partnerships KAUST CEMSE KAUST PSE KAUST Innovation KAUST Semiconductors

Our new paper published last week in the Journal of Applied Physics shows that MST technology can enhance the performance of CMOS devices commonly used in electronics by reducing surface roughness scattering (SRS). Our film enables a smoother silicon interface from a unique oxygen exchange mechanism between the MST layer and the gate dielectric. N-type MOSFETs saw the biggest benefit, with SRS reduced by more than 50%. Results are more limited for p-type MOSFETs, but taken together the net CMOS benefit can be substantial. In addition to the well-understood benefits MST brings in dopant control, further performance benefits can be achieved in specific applications, such as electronics designed for low-temperature (space) operation, where SRS is the limiting factor in current flow. Highly-scaled devices using high-k/metal-gate technology and those using FDSOI would also see performance gains. You can find the paper here:  https://lnkd.in/g_V2CTyj